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Spectroscopic investigations of miniband dispersion and excitonic effects in GaAs/AlAs short-period superlattices

Authors
Journal
Solid State Communications
0038-1098
Publisher
Elsevier
Publication Date
Volume
72
Issue
4
Identifiers
DOI: 10.1016/0038-1098(89)90123-3
Disciplines
  • Physics

Abstract

Abstract The localization and delocalization of heavy-hole excitons along the [0 0 1] growth-axis in a set of two GaAs/AlAs short-period superlattices (SPS) with GaAs wells of L 1 Z = 4.1 nm and L 2 Z = 3.2 nm, respectively, and AlAs barriers of L B = 0.90 nm and of one GaAs single quantum well with L Z = 4.1 nm embedded in the L 2 Z = 3.2 nm SPS are investigated by photoluminescence excitation spectroscopy. We observe distinct resonance absorption features which allows us to discriminate the spectral characteristics for the superlattice excitons and the two-dimensionally localized excitons associated with the same L Z value. The optical transition miniband width is found to be Δ 1 = 24 ± 3 meV for the SPS with L 1 Z = 4.1 nm.

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