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Heat-spreading diamond films for GaN-based high-power transistor devices

Authors
Journal
Diamond and Related Materials
0925-9635
Publisher
Elsevier
Publication Date
Volume
10
Identifiers
DOI: 10.1016/s0925-9635(00)00562-8
Keywords
  • Device Modeling
  • Nucleation
  • Metal Semiconductor Field-Effect Transistor (Mesfet)
  • Processing

Abstract

Abstract We discuss the potential of heat-spreading films with respect to improving the performance of thermally limited high-power high-frequency GaN-FET devices and report on successful diamond deposition on GaN-FETs. Detailed conditions for process compatibility with GaN-FET technology are discussed and shown to be satisfied by the low-temperature deposition process developed.

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