Affordable Access

Publisher Website

Si doped GaAs/AlGaAs terahertz detector and phonon effect on the responsivity

Authors
Journal
Infrared Physics & Technology
1350-4495
Publisher
Elsevier
Publication Date
Volume
50
Identifiers
DOI: 10.1016/j.infrared.2006.10.019
Disciplines
  • Physics

Abstract

Abstract Terahertz detection capability of an n-type heterojunction interfacial work function internal photoemission (HEIWIP) detector is demonstrated. Threshold frequency, f 0, of 3.2 THz (93 μm) was obtained by using n-type GaAs emitter doped to 1 × 10 18 cm −3 and Al 0.04Ga 0.96As single barrier structure. The detector shows a broad spectral response from 30 to 3.2 THz (10–93 μm) with peak responsivity of 6.5 A/W at 7.1 THz under a forward bias field of 0.7 kV/cm at 6 K. The peak quantum efficiency and peak detectivity are ∼19% and ∼5.5 × 10 8 Jones, respectively under a bias field of 0.7 kV/cm at 6 K. In addition, the detector can be operated up to 25 K.

There are no comments yet on this publication. Be the first to share your thoughts.

Statistics

Seen <100 times
0 Comments

More articles like this

Terahertz acoustic-phonon signal generated by heat...

on Superlattices and Microstructu... Jan 01, 1995

Terahertz emission fromδ-doped GaAs and GaAs/AlGaA...

on Optics Communications Jun 15, 2014

Interface effects in modulation-doped GaAs/AlGaAs...

on Microelectronics Journal Jan 01, 2005

Si delta-doped GaAs and AlGaAs by low-pressure MOV...

on Materials Science and Engineer... Jan 01, 1994
More articles like this..