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MAGNETIC FIELD INDUCED RESONANCE IN A DOUBLE-BARRIER RESONANT TUNNELING DIODE

Authors
Journal
Solid-State Electronics
0038-1101
Publisher
Elsevier
Publication Date
Volume
42
Issue
2
Identifiers
DOI: 10.1016/s0038-1101(97)00000-2
Disciplines
  • Design

Abstract

Abstract The effect of a magnetic field in the singular enhancement of tunneling near threshold has been investigated in specifically designed double-barrier resonant tunneling structures. The experimental results prove that an additional increase of tunnel current is due to impurity-assisted tunneling. It is shown that a donor bound state arises as a result of dopant diffusion into the barrier. These states are identified as strongly localized DX centers.

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