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An improved altered layer model for ion assisted deposition under net sputtering erosion conditions

Authors
Journal
Vacuum
0042-207X
Publisher
Elsevier
Publication Date
Volume
39
Issue
1
Identifiers
DOI: 10.1016/0042-207x(89)90096-1

Abstract

Abstract An improved analysis, employing more robust treatments of atomic migration currents which frustrate variations in atomic density, of a three layer model for prediction of concentration ratios of impurity atom species incorporated into substrates is given. Atomic incorporation is affected either by direct implantation or atomic deposition and irradiation induced atomic mixing. The layers considered are an outermost sputtering layer, an altered layer and the bulk; it is shown how the model can be adapted to a situation where constant atomic density constraints are relaxed.

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