SiO2 layers were deposited on silicon wafers from a mixture of TEOS (tetraethylorthosilicate) and oxygen by ArF-excimer laser radiation. The deposition conditions were studied as a function of substrate temperature, partial pressure and laser fluence. Deposition rates as high as 2000 å/min at pulse energies of 100 mJ/cm2 may easily be obtained. The physical properties of the SiO2 layers were investigated by FT-IR spectroscopy, Rutherford backscattering and ellipsometry. The electrical properties of breakdown voltage, interface state density and mobile-ion density are also given. The SiO2 layers show nearly the same quality as thermally grown SiO2 layers.