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Transmission electron microscopy study of hexagonal GaN film grown on GaAs (0 0 1) substrate by using AlAs nucleation layer

Authors
Journal
Journal of Crystal Growth
0022-0248
Publisher
Elsevier
Publication Date
Volume
220
Issue
4
Identifiers
DOI: 10.1016/s0022-0248(00)00836-8
Keywords
  • Mbe
  • Gan
  • Tem
  • Alas Nucleation Layer

Abstract

Abstract Hexagonal gallium nitride (h-GaN) films have been grown on AlAs nucleation layer by using radio frequency (RF) plasma source-assisted molecular beam epitaxy on GaAs (0 0 1) substrate. Transmission electron microscopy (TEM) techniques are used to characterize such h-GaN epilayers. TEM results show that (0 0 0 1) atom planes of h-GaN are parallel to (0 0 1) atom planes of the GaAs substrate. Defects, such as stacking faults and dislocations, have also been observed.

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