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Compositional profile of HgCdTe in metalorganic chemical vapor deposition (MOCVD) system with multinozzles

Authors
Journal
Journal of Crystal Growth
0022-0248
Publisher
Elsevier
Publication Date
Volume
117
Identifiers
DOI: 10.1016/0022-0248(92)90712-r
Disciplines
  • Chemistry

Abstract

Abstract We studied the dependence of the compositional profile on the nozzle configuration in Hg 1− x Cd xTe growth using a metalorganic chemical vapor deposition (MOCVD) system having multinozzle injectors and a rotating susceptor in a vertical reactor. In growth, the composition depends on the concentration of dimethyl-cadmium (DMCd). In the epilayer grown by injecting DMCd from one nozzle, the x-value was highest just beneath the nozzle. The x-value peak shifts towards the rotation center when the epilayer is grown from an off-center nozzle with rotation. The compositional profile of the epilayer grown by the injection of DMCd from two nozzles was the same as the summation of the two profiles produced with one, and then the other nozzle. In a simulation based on these results, we found that 8 nozzle injectors are needed to grow the epilayer on a 3-inch substrate within a compositional variation (Δ x) of 0.002.

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