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Modification of ISFETs by covalent anchoring of poly(hyroxyethyl methacrylate) hydrogel. Introduction of a thermodynamically defined semiconductor-sensing membrane interface

Authors
Publisher
Elsevier B.V.
Publication Date
Volume
230
Identifiers
DOI: 10.1016/s0003-2670(00)82761-0
Disciplines
  • Chemistry

Abstract

Abstract Silicon dioxide ion-sensitive field effect transistors were modified by silylation with methacryloxypropyltrimethoxysilane (MPTS) and with in situ photopolymerized poly(hydroxyethyl methacrylate). Subsequently, the covalently linked methacrylate was swollen with a buffered potassium chloride solution, prior to the introduction of a hydrophobic sensing membrane. The introduced hydrogel layer effects a significant reduction in the peak-to-peak noise levels and eliminates completely interference from carbon dioxide. The method is compatible with integrated circuit photolithographic techniques and improves the development of potentiometric biosensors and chemical sensors.

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