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Radiative transitions of layered semiconductor GaS doped with P

Authors
Journal
Journal of Luminescence
0022-2313
Publisher
Elsevier
Publication Date
Volume
118
Issue
1
Identifiers
DOI: 10.1016/j.jlumin.2005.08.002
Keywords
  • Layered Semiconductor
  • Gas
  • Impurity Level
  • P Impurity
  • Photoluminescence

Abstract

Abstract Photoluminescence (PL) measurement has been made on P-doped p-GaS. The 2.35 and 2.12 eV emission bands are observed in the PL spectrum of P-doped sample at 77 K. The temperature dependence of full-width at half-maximum and the shape of the PL spectrum of the 2.12 eV emission band are characterized by the recombination mechanism of the configurational coordinate model. It is found that the 2.12 eV emission band is related to the complex center of vacancy and acceptor due to P atoms. It is found from the presence of the complex center that the P-doped samples include a high concentration of defects or defect complexes.

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