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Preparation of PZT on diamond by pulsed laser deposition with Al2O3buffer layer

Authors
Journal
Thin Solid Films
0040-6090
Publisher
Elsevier
Publication Date
Volume
415
Identifiers
DOI: 10.1016/s0040-6090(02)00495-9
Keywords
  • Surface Acoustic Wave
  • Pb(Zr0.52Ti0.48)O3
  • Al2O3Buffer Layer
  • Diamond
  • Pulsed Laser Deposition
Disciplines
  • Chemistry
  • Musicology
  • Physics

Abstract

Abstract For the purpose of broad-bandwidth high frequency surface acoustic wave devices fabrication, we report on the successful preparation of Pb(Zr 0.52Ti 0.48)O 3 (PZT) films by pulsed laser deposition (PLD) process on (1 1 1)-oriented polycrystalline diamond substrates with aluminum oxide (Al 2O 3) as buffer layer. Al 2O 3 was deposited on diamond substrates by high-vacuum electron-beam evaporation method at 200 °C. Then PLD technique was used for PZT deposition. The chemical states of Al and O in Al 2O 3 were investigated by X-ray photoelectron spectroscopy. The surface morphology of Al 2O 3 and PZT films was studied by the atom force microscopy image. X-ray diffraction results showed that before annealing, 350 °C-prepared PZT was amorphous and 550 °C-prepared PZT was (2 2 2)-oriented pyrochlore phase PZT. After rapid thermal annealing at 650 °C, (1 0 1)-oriented pure perovskite phase PZT could be obtained from the 350 °C-prepared PZT film.

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