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The doping of GaN with Mg diffusion

Authors
Journal
Solid-State Electronics
0038-1101
Publisher
Elsevier
Publication Date
Volume
43
Issue
3
Identifiers
DOI: 10.1016/s0038-1101(98)00289-5
Disciplines
  • Chemistry

Abstract

Abstract The characteristics of GaN films diffused with Mg were studied. The undoped GaN films were grown by metalorganic chemical vapor deposition (MOCVD). The photoluminescence (PL) spectra of Mg diffused GaN showed a broad violet emission. The Mg-diffused GaN was p-type conductivity with a mobility of 13 cm 2/V-s and a hole concentration of 3×10 15/cm 3 at a diffusion temperature of 1100°C. However, the samples, which were diffused at 1100°C, showed a red emission peak after the annealing process. From the diffusion depth profile observed by secondary ion mass spectrometry (SIMS), we obtained the activation energy of 1.3 eV for Mg diffusion in GaN.

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