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Site-dependent and composition-dependent spatial dielectric functions for Ga1−xAlxAs

Authors
Journal
Journal of Physics and Chemistry of Solids
0022-3697
Publisher
Elsevier
Publication Date
Volume
45
Issue
5
Identifiers
DOI: 10.1016/0022-3697(84)90092-1

Abstract

Abstract In this paper we present analytical site-dependent and composition-dependent spatial dielectric functions for Ga 1− x Al x As involving compositions from x =0.1 to x =0.4 in steps of 0.1. The spatial dielectric functions we present describe the response of the valence electrons of Ga 1− x Al x As to charges Z = ± 1 (in atomic unit) placed on Ga, Al and As sites. To these sites we assign the effective charges (due to the partial ionicity of the bonds) of Z = +0.16, +0.20 and −0.16 (in atomic unit).

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