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InAs quantum dot field effect transistors

Authors
Journal
Superlattices and Microstructures
0749-6036
Publisher
Elsevier
Publication Date
Volume
25
Identifiers
DOI: 10.1006/spmi.1998.0688
Disciplines
  • Physics

Abstract

Abstract We have studied single electron and hole storage in self-assembled InAs quantum dots (QDs) embedded in GaAs/n-AlGaAs field effect transistors (QD-FETs). We prepared two types of QD-FETs. A single electron and a photo-generated single hole can be stored in each QD in Type 1. In the new Type II, single-electron discharge processes can be controlled by a surface gate voltage ( V g ) as well as single-electron storage processes. We demonstrate possible application to novel photo devices and quantum dot memory devices.

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