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Studies of flicker noise in In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes

Authors
Journal
Solid-State Electronics
0038-1101
Publisher
Elsevier
Publication Date
Volume
35
Issue
9
Identifiers
DOI: 10.1016/0038-1101(92)90151-2

Abstract

Abstract We report on low-frequency noise studies of strained-layer In 0.53Ga 0.47As/AlAs/InAs resonant tunneling diodes over a frequency range of 10 Hz–100 kHz and a temperature range of 77–293 K. The noise was found to be dominated by flicker ( 1 f γ ) noise for frequencies below 10 kHz, with the frequency exponent γ varying from 0.75 to 1.1 over temperature. Our results indicate that the 1 f γ noise originates from thermal activation of electrons from the conduction band to interface states at the heterojunctions, with a distribution of activation energy that peaks at about 0.27 eV.

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