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Effect of random doping on the electronic spectrum intrans-polyacetylene

Authors
Journal
Solid State Communications
0038-1098
Publisher
Elsevier
Publication Date
Volume
47
Issue
11
Identifiers
DOI: 10.1016/0038-1098(83)90128-x

Abstract

Abstract Random dopants in trans (CH) x introduce a broad band of gap states which merges with the conduction and valence band edges at a doping concentration n c of a few percent. This overlap of band and gap states leads to an onset of Pauli susceptibility, since the density of states at the Fermi energy E F is nonzero for n> n c . However, E F lies in a region of localized states until n is considerably greater than n c and the system remains a semiconductor.

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