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Optical second-harmonic generation of modulation doped Ga0.8Al0.2As film grown by molecular beam epitaxy

Authors
Journal
Solid State Communications
0038-1098
Publisher
Elsevier
Publication Date
Volume
64
Issue
4
Identifiers
DOI: 10.1016/0038-1098(87)90795-2
Disciplines
  • Physics

Abstract

Abstract Absolute values of the second-order nonlinear susceptibility of modulation doped (100) Ga 0.8Al 0.2As are measured through a Q-switched Nd:YAG laser with self-calibrated power emanating in p-polarization. The angular variation of the reflecting second-harmonic wave agrees satisfactorily with the Bloembergen and Pershan theory. The nonlinear susceptibility of Ga 0.8Al 0.2As grown by MBE method is 20% larger than that of GaAs. A quasi-photon counting technique exploited in this experiment provides the possibility to detect the second harmonic reflecting coefficients as low as 10 -21cm 2/watt.

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