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Normal Hall coefficient of LPCVD amorphous silicon

Authors
Journal
Journal of Non-Crystalline Solids
0022-3093
Publisher
Elsevier
Publication Date
Volume
114
Identifiers
DOI: 10.1016/0022-3093(89)90166-x

Abstract

Abstract A normal Hall coefficient has been observed from doped amorphous silicon thin film fabricated by a LPCVD method. The magnitude of the Hall mobility is 0.15 cm 2/Vs, corresponding to a room temperature conductivity 0.3 (Ωcm) −1. The material is amorphous in structure as indicated by X-ray, Raman and TEM. Transport property studies yield compatible results.

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