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Polythiophene-based field-effect transistors with enhanced air stability

Authors
Journal
Organic Electronics
1566-1199
Publisher
Elsevier
Publication Date
Volume
11
Issue
2
Identifiers
DOI: 10.1016/j.orgel.2009.10.019
Keywords
  • Organic Field-Effect Transistors
  • Polythiophene
  • Polymethylmethacrylate
  • Air Stability

Abstract

Abstract Organic field-effect transistors (OFETs) based on regioregular poly(3-hexyl-thiophene) (P3HT) have been demonstrated with improved ambient-air stability. Substrates of untreated SiO 2, octadecyltrichlorosilane (OTS)-treated SiO 2, and SiO 2 coated with a thin layer of polymethylmethacrylate (PMMA) were compared in terms of OFET electric performance and air stability. We are able to show virtually no change in transistor on/off ratio over a 3-day period in ambient air in OFETs fabricated on SiO 2-PMMA substrates. We also studied devices based on OTS-treated PMMA interface. By analyzing the surface morphology, possible mechanisms of the enhanced air stability are discussed.

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