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Effect of temperature and pressure on the thermal oxidation behaviour of β-Sn films

Authors
Journal
Materials Research Bulletin
0025-5408
Publisher
Elsevier
Publication Date
Volume
5
Issue
12
Identifiers
DOI: 10.1016/0025-5408(70)90052-8

Abstract

Abstract Room temperature grown β-Sn films were thermally oxidised for 2 hours at various temperatures up to 200°C both in air and in vacuum. Only above about 130°C is α-SnO oxide formed; below 130°C amorphous oxide growth occurs. No higher oxide growth occurs in air. In vacuum, the growth morphology of α-SnO is different (whisker growth). A surprising result — the growth of a higher oxide at reduced oxygen partial pressure — was noted.

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