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Photomodulation spectroscopy of defects in hydrogenated amorphous silicon germanium alloys

Authors
Journal
Journal of Non-Crystalline Solids
0022-3093
Publisher
Elsevier
Publication Date
Volume
114
Identifiers
DOI: 10.1016/0022-3093(89)90658-3
Keywords
  • Section 14. Picosecond Spectroscopy

Abstract

Abstract The photomodulation of the sub-bandgap optical absorption spectrum was measured for a series of amorphous hydrogenated silicon germanium (a-Si 1−xGe x:H) alloy specimens. For atomic germanium concentration exceeding 0.10 a single well-defined defect absorption band was observed which was associated with the germanium-related D-center found by electron spin resonance. The absorption peak was displaced by 0.4 eV from the optical gap as the gap varied from 1.65 to 1.0 eV.

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