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Physical modeling of fast p-i-n diodes with carrier lifetime zoning, part I : Device model

Authors
Publisher
IEEE
Publication Date
Keywords
  • Qa Mathematics
  • Tk Electrical Engineering. Electronics Nuclear Engineering

Abstract

This paper presents the development and implementation of a physics-based diode model which can simulate aspects of high-voltage diodes such as snappy recovery during punch-through and the modified carrier density profile due to local lifetime control. It uses a Fourier series solution for the ambipolar diffusion equation in the lightly doped base region. The model is compared with finite-element device simulations. A parameter extraction procedure for the diode with lifetime control is proposed in Part II.

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