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Chemical potential shift in Si (100) MOS-structure induced by submillimeter radiation

Authors
Journal
Solid State Communications
0038-1098
Publisher
Elsevier
Publication Date
Volume
71
Issue
5
Identifiers
DOI: 10.1016/0038-1098(89)90769-2
Disciplines
  • Chemistry
  • Physics

Abstract

Abstract In Si-MOS structure on (100) surface in a normal quantizing magnetic field a change in the voltage between the gate and the 2D electron layer was found induced by electromagnetic irradiation with wavelength λ ⪅ 1 mm. It is shown, that effect is due to the shift of the chemical potential of 2D electrons caused by the increase a temperature of electron subsystem in contrast to the causes leading to analogous effect in GaAs/ AlGaAs heterojunction 5.

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