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Selective growth and characterization of gallium nitride nanowires through an N-Ga2O3 layer

Authors
Journal
Ceramics International
0272-8842
Publisher
Elsevier
Identifiers
DOI: 10.1016/j.ceramint.2014.05.119
Keywords
  • C. Optical Properties
  • D. Nitrides
  • Selective Growth
Disciplines
  • Chemistry

Abstract

Abstract GaN nanowires were synthesized on sapphire substrates by chemical vapor deposition. The selective growth of GaN nanowires was obtained through an N-Ga2O3 layer prepared by radio frequency magnetron sputtering. The X-ray diffraction (XRD) and Raman measurements indicated the GaN nanowires to be all indexed to the hexagonal wurtzite structure. The photoluminescence (PL) spectra were composed of a strong UV emission peak (365nm) and a weak yellow luminescence (YL) band (~600nm). The selective growth mechanism of GaN nanowires was briefly discussed.

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