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Optical properties of reactively sputtered silicon nitride films

Authors
Journal
Vacuum
0042-207X
Publisher
Elsevier
Publication Date
Volume
37
Identifiers
DOI: 10.1016/0042-207x(87)90319-8

Abstract

Abstract SiN x films ( x ranging between 0.1 and 1.4) have been deposited by dc reactive magnetron sputtering from a silicon target in nitrogen/argon atmospheres. The dispersion curves of the refractive index and the absorption coefficient have been determined in the 0.5–2.5 μm wavelength range from transmittance and reflectance measurements at different angles. A strong correlation is observed between the above optical constants and the compositional analysis of the films.

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