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Ultra Shallow Arsenic Junctions in Germanium Formed by Millisecond Laser Annealing

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Electrochemical Society, Inc.
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Abstract

Millisecond laser annealing is used to fabricate ultra shallow arsenic junctions in preamorphized and crystalline germanium, with peak temperatures up to 900 degrees C. At this temperature, As indiffusion is observed while yielding an electrically active concentration up to 5.0 x 10(19) cm(-3) for a junction depth of 31 nm. Ge preamorphization and the consecutive solid phase epitaxial regrowth are shown to result in less diffusion and increased electrical activation. The recrystallization of the amorphized Ge layer during laser annealing is studied using transmission electron microscopy and spectroscopic ellipsometry.

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