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Investigation of hopping transport in n-a-Si:H/c-Si solar cells with pulsed electrically detected magnetic resonance

Authors
Journal
Journal of Non-Crystalline Solids
0022-3093
Publisher
Elsevier
Publication Date
Volume
352
Identifiers
DOI: 10.1016/j.jnoncrysol.2005.10.026
Keywords
  • Amorphous Semiconductors
  • Silicon
  • Solar Cells
  • Photovoltaics
  • Electrical And Electronic Properties
  • Conductivity
  • Electron Spin Resonance

Abstract

Abstract Hopping transport through heterostructure solar cells based on B-doped crystalline silicon wafers with highly P-doped hydrogenated amorphous silicon emitters with different thicknesses is investigated at T = 10 K with pulsed electrically detected magnetic resonance. The measurements show that transport is dominated by conduction band tail states ( g ≈ 2.0046) with a distribution of their mutual coupling strength. The signal intensity correlates to the sample thickness and the g-factors do not exhibit an anisotropy which suggests that transport is still dominated by bulk properties of amorphous silicon. In addition, two broad P-donor hyperfine satellites can be detected. Influences of interface defects such as P b-like states known from silicon dioxide interfaces are either suppressed by the high Fermi energy at the interface or not present.

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