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Quantum efficiency in InSb

Authors
Journal
Journal of Physics and Chemistry of Solids
0022-3697
Publisher
Elsevier
Publication Date
Volume
23
Issue
8
Identifiers
DOI: 10.1016/0022-3697(62)90122-1
Disciplines
  • Physics

Abstract

Abstract The phonon-less electron collision processes which can create electron-hole pairs are analyzed theoretically on the basis of both parabolic and non-parabolic energy bands to explain the dependence of the quantum efficiency in InSb on the energy of the incident illumination. It is found that two of these processes are dominant with room temperature thresholds at photon energies of 0.44 eV and 0.62 eV, in good agreement with the experimental values 0.47 eV and 0.60 eV. The energy dependence of the quantum efficiency is also qualitatively explained.

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