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Ion-beam synthesis of magnetic semiconductors

Authors
Journal
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms
0168-583X
Publisher
Elsevier
Publication Date
Volume
272
Identifiers
DOI: 10.1016/j.nimb.2011.01.037

Abstract

Abstract This review focuses on current research on the topic of ion beam based approaches for the fabrication of magnetic semiconductors. Among them, classic semiconductors such as Si, Ge, GaAs as well as solid–gas compounds such as ZnO or GaN doped with transition metals are currently in the focus of research. Those are considered to be basic materials for future spintronics devices. In the review also possible pitfalls leading to misinterpretation of the data obtained will be discussed.

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