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Crystallinity of heteroepitaxial GaAs layers grown on (Ca, Sr)F2/CaF2/Si(100) structures by molecular beam epitaxy

Authors
Journal
Journal of Crystal Growth
0022-0248
Publisher
Elsevier
Publication Date
Volume
114
Issue
3
Identifiers
DOI: 10.1016/0022-0248(91)90046-8

Abstract

Abstract We have investigated the crystallinity of GaAs layers grown by molecular beam epitaxy (MBE) on (Ca,Sr)F 2/CaF 2/Si(100) structures, in which the mixed fluoride layer was lattice-matched with GaAs. The crystallinity of the GaAs layers changed with the growth temperature of the (Ca,Sr)F 2 layer. Streaky surface reliefs, which resulted from twin defects, were observed on the GaAs layers. The density of the twin defects was high in the GaAs/(Ca,Sr)F 2/CaF 2/Si structure which had {111} facet planes on the (Ca,Sr)F 2 surface. The results suggested that the twin defects were introduced mainly by thermal stress, which was generated during cooling down from the growth temperature.

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