Affordable Access

Publisher Website

Topology investigation for the low frequency noise compact modelling of bipolar transistors

Authors
Journal
Solid-State Electronics
0038-1101
Publisher
Elsevier
Publication Date
Volume
47
Issue
5
Identifiers
DOI: 10.1016/s0038-1101(02)00452-5
Disciplines
  • Mathematics

Abstract

Abstract The low frequency noise (LFN) properties of bipolar transistors are investigated in terms of equivalent input referred, partially correlated noise generators. These properties are studied as a function of the intrinsic noise sources and of the small-signal model topology. Topology invariance and identity properties are identified and their practical implications on the LFN modelling of bipolar transistors are assessed.

There are no comments yet on this publication. Be the first to share your thoughts.