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Photoemission of Ge(110) at room and high temperature

Authors
Journal
Surface Science
0039-6028
Publisher
Elsevier
Publication Date
Identifiers
DOI: 10.1016/s0039-6028(97)01075-3
Keywords
  • Germanium
  • Low Index Single Crystal Surfaces
  • Phase Transitions
  • Photoelectron Spectroscopy
  • Semiconducting Surfaces

Abstract

Abstract Valence band and Ge 3d core level photoemissions have been carried out on Gd(110) at room and high temeprature. Structures in the room-temperature valence band spectrum are interpreted in terms of bulk interband transitions and a surface state. Major changes in the valence band take place at ∼800 K, at which temperature, the centroids of the core level spectra start to move to a lower binding energy, and their widths start to increase more quickly.

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