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Radiation damage in the non-metal sublattices of V3Ge and V3Si single crystals

Authors
Journal
Solid State Communications
0038-1098
Publisher
Elsevier
Publication Date
Volume
39
Issue
7
Identifiers
DOI: 10.1016/0038-1098(81)90523-8
Disciplines
  • Physics

Abstract

Abstract Channeling measurements on V 3Ge and V 3Si single crystals, which have been irradiated with He-ions, revealed a considerable narrowing of the angular yield curves for the B-atom sublattices. Analysing the data with a computer simulation, the best agreement with the experiment was achieved by adding a static contribution to the thermal vibration amplitudes. After irradiation with He-fluences, which cause a saturation in the degradation of the superconducting transition temperature in the V 3Ge and V 3Si films, it was concluded that the average static displacement amplitude was 0.006 nm for the Ge-atoms and 0.01 nm for the Si-atoms.

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