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Structural influence on the electronic properties of methoxy substituted polyaniline/aluminum Schottky barrier diodes

Authors
Journal
Materials Science and Engineering B
0921-5107
Publisher
Elsevier
Publication Date
Volume
104
Identifiers
DOI: 10.1016/s0921-5107(03)00310-6
Keywords
  • Methoxy Substituted Polyaniline
  • Schottky Diode
  • Electronic Properties
Disciplines
  • Chemistry

Abstract

Abstract Poly( o-methoxyaniline) (POMA) and poly(2,5-dimethoxyaniline) (PDMA) were used for fabricating Schottky diode devices with sandwich structure, as Al/POMA/indium tin oxide (ITO) coated glass and ITO/PDMA/Al. These devices exhibit rectifying behavior with differences in performance parameters like turn on voltage of the device, barrier height and saturation current density. A close comparison of the current ( I)–voltage ( V) characteristics reveals such differences. Cyclicvoltammetry and UV-Vis spectroscopy of POMA and PDMA films were used to obtain electrochemical and optical properties of the polymers and discussed in support of the observed differences in the electronic properties of the devices fabricated with POMA/PDMA.

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