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Epitaxial films of the low temperature modification of the compound Cu2Se

Authors
Journal
Thin Solid Films
0040-6090
Publisher
Elsevier
Publication Date
Volume
35
Issue
2
Identifiers
DOI: 10.1016/0040-6090(76)90253-4

Abstract

Abstract Epitaxial films of the low temperature modification of Cu 2Se deposited onto NaCl single-crystal substrates at 200°C and 400°C have been investigated. The diffraction pattern of this phase was indexed on the basis of a hexagonal lattice with unit cell parameters a = 7.07 and c = 6.68 A ̊ . These parameters are related to the parameters of the f.c.c. phase by the relations a h = ( √3 √2 ) a c and c h = ( 2 √3 ) a c .

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