Affordable Access

Electrons and holes in a 40 nm thick silicon slab at cryogenic temperatures

Publication Date


We demonstrate low temperature operation of an electron-hole bilayer device based on a 40 nm thick layer of silicon in which electrons and holes can be simultaneously induced and contacted independently. The device allows the application of bias between the electrons and holes enhancing controllability over density and confining potential. We confirm that drag measurements are possible with the structure.

There are no comments yet on this publication. Be the first to share your thoughts.


Seen <100 times

More articles like this

Primary defect transformations in high-resistivity...

on Physica B Condensed Matter Jan 01, 2009

Condensation of injected electrons and holes in si...

on Solid State Communications Jan 01, 1974

Electrons, holes, and the hall effect in amorphous...

on Journal of Non-Crystalline Sol... Jan 01, 1993
More articles like this..