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Donor levels of the divacancy-oxygen defect in silicon

Authors
Journal
Journal of Applied Physics
0021-8979
Publisher
American Institute of Physics
Publication Date

Abstract

The elimination of divacancies (V2) upon isochronal and isothermal annealing has been studied in oxygen-rich p-type silicon by means of deep level transient spectroscopy (DLTS) and high resolution Laplace DLTS. Divacancies were introduced into the crystals by irradiation with 4 or 6MeV electrons. The temperature range of the divacancy disappearance was found to be 225-300 C upon 30 min isochronal annealing in the samples studied. A clear anti-correlation between the disappearance of V2 and the appearance of two hole traps with activation energies for hole emission of 0.23 eV and 0.08 eV was observed. It is argued that these traps are related to the first and second donor levels of the divacancy-oxygen (V2O) complex, respectively. Significant electric field enhancement of the hole emission from the second donor level of the V2O center occurred in the diodes studied. It is shown that in the range of electric field from 4103 to 1.2104 V/cm the emission enhancement is associated with phonon-assisted tunnelling

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