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Promoting and characterizing new chemical structure at metal-semiconductor interfaces

Authors
Journal
Surface Science
0039-6028
Publisher
Elsevier
Publication Date
Volume
168
Identifiers
DOI: 10.1016/0039-6028(86)90856-3
Disciplines
  • Chemistry

Abstract

Abstract A variety of surface and “buried interface” techniques reveal that thermal processing can influence strongly the interface interdiffusion, the dominant chemical reactions, and the nature and spatial distribution of deep level defects which contribute to the electronic barrier. We present here examples of thermally-processed interfaces ranging from Si to III–V to II–VI compound semiconductor-metal interfaces and using isothermal, rapid thermal, and pulsed laser annealing techniques.

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