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Study on the doping effect of Sn-doped ZnO thin films

Authors
Journal
Superlattices and Microstructures
0749-6036
Publisher
Elsevier
Volume
53
Identifiers
DOI: 10.1016/j.spmi.2012.10.012
Keywords
  • Tin Doped Zinc Oxide
  • Thin Films
  • Chemical Spray Pyrolysis
Disciplines
  • Chemistry

Abstract

Abstract Tin doped zinc oxide (ZnO:Sn) thin films were deposited onto Pyrex glass substrates by chemical spray pyrolysis technique starting from zinc acetate (CH3CO2)2Zn⋅2H2O and tin chloride SnCl2. The effect of Sn doping on structural, optical and electrical properties was investigated. The atomic percentages of dopant in ZnO-based solution were y=[Sn4+]/[Zn2+]=0%, 0.2%, 0.6% and 1%. It was found that all the thin films have a preferential c-axis orientation. With increase of Sn doping, the peak position of the (002) plane was shifted to the high 2θ values. ZnO:Sn demonstrated obviously improved surface roughness, reduced average crystallite size, enhanced Hall mobility and reduced resistivity. Among all of the tin doped zinc oxide in this study, films doped with 0.6at.% Sn concentration exhibited the best properties, namely a Hall mobility of 9.22cm2V−1s−1, an RMS roughness of 37.15nm and a resistivity of 8.32×10−2Ωcm.

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