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The formation of a dual-layer carbon film on silicon carbide using a combination of carbide-derived carbon process and chemical vapor deposition in a CCl4– containing atmosphere

Authors
Journal
Carbon
0008-6223
Publisher
Elsevier
Volume
49
Issue
2
Identifiers
DOI: 10.1016/j.carbon.2010.10.026
Disciplines
  • Chemistry

Abstract

Graphical abstract A dual-layer carbon film is prepared using a combination of carbide-derived carbon (CDC) process and chemical vapor deposition (CVD) in a CCl 4–containing atmosphere. The CDC sub-layer is formed by chlorination of SiC, while the CVD layer is formed by pyrolyzing the CCl 4. Research highlights ► This paper presents the formation of a dual-layer carbon film on SiC using a combination of chemical vapor deposition and carbide-derived carbon process in CCl 4-containing atmosphere. In the process, the chlorination of SiC takes place to form a CDC sub-layer, while the pyrolyzing of CCl 4 takes place to form a CVD top-layer. The temperature plays an important role in formation of the dual-layer film. The synthesis route for the carbon film was not reported previously.

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