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The effect of metallization contact resistance on the measurement of the field effect mobility of long-channel unannealed amorphous In–Zn–O thin film transistors

Authors
Journal
Thin Solid Films
0040-6090
Publisher
Elsevier
Publication Date
Volume
520
Issue
10
Identifiers
DOI: 10.1016/j.tsf.2011.11.067
Keywords
  • Indium Zinc Oxide
  • Thin Film Transistor
  • Amorphous Oxide Semiconductors
  • Contact Resistance
  • Field Effect Mobility

Abstract

Abstract The effect of contact resistance on the measurement of the field effect mobility of compositionally homogeneous channel indium zinc oxide (IZO)/IZO metallization thin film transistors (TFTs) is reported. The TFTs studied in this work operate in depletion mode as n-channel field effect devices with a field effect mobility calculated in the linear regime (μFE) of 20±1.9cm2/Vs and similar of 18±1.3cm2/Vs when calculated in the saturation regime (μFEsat). These values, however, significantly underestimate the channel mobility since a large part of the applied drain voltage is dropped across the source/drain contact interface. The transmission line method was employed to characterize the contact resistance and it was found that the conducting-IZO/semiconducting-IZO channel contact is highly resistive (specific contact resistance, ρC>100 Ωcm2) and, further, this contact resistance is modulated with applied gate voltage. Accounting for the contact resistance (which is large and modulated by gate voltage), the corrected μFE is shown to be 39±2.6cm2/Vs which is consistent with Hall mobility measurements of high carrier density IZO.

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