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Maskless selective growth of semi-polar (1 12¯ 2) GaN on Si (3 1 1) substrate by metal organic vapor phase epitaxy

Authors
Journal
Journal of Crystal Growth
0022-0248
Publisher
Elsevier
Publication Date
Volume
311
Issue
10
Identifiers
DOI: 10.1016/j.jcrysgro.2009.01.064
Keywords
  • A1. Defects
  • A3. Metalorganic Vapor Phase Epitaxy
  • A3. Selective Epitaxy
  • B1. Nitrides
  • B2. Semiconducting Iii–V Materials
Disciplines
  • Chemistry

Abstract

Abstract Semi-polar (1 1 2¯ 2) GaN layers were selectively grown by metal organic chemical vapor phase epitaxy on patterned Si (3 1 1) substrates without SiO 2 amorphous mask. The (1 1 2¯ 2) GaN layers could be selectively grown only on Si (1 1 1) facets when the stripe mask width was narrower than 1 μm even without SiO 2. Inhomogeneous spatial distribution of donor bound exciton (DBE) peak in low-temperature cathodoluminescence (CL) spectra was explained by the difference of growth mode before and after the coalescence of stripes. It was found that the emission intensity related crystal defects is drastically decreased in case of selective growth without SiO 2 masks as compared to that obtained with SiO 2 masks.

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