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A model for the performance of silicon microstrip detectors

Authors
Journal
Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment
0168-9002
Publisher
Elsevier
Publication Date
Volume
303
Issue
2
Identifiers
DOI: 10.1016/0168-9002(91)90795-r

Abstract

Abstract The performance of silicon microstrip detectors which will be used at the SSC is simulated using charge carrier transport and electrostatic equations. The output current pulse shape as a function of detector dimensions, applied voltage, magnetic field strength, and particle trajectory is calculated. A Monte Carlo calculation, which combines the pulse shape results with an energy loss distribution, indicates that when operating at a 99% detection efficiency, charge sharing between neighboring strips will occur more than 40% of the time for 50 μm pitch double-sided readout detectors in the environment of a 2 T magnetic field. Using only hit/no-hit information, a position resolution of about 28 μm FWHM is achievable in the strip-to-strip dimension. If the p-side strips are rotated by 5 mrad with respect to the n-side strips, a hit position resolution in the lengthwise dimension of about 7 mm FWHM is calculated.

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