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Problems in the understanding of electronic properties of amorphous silicon

Authors
Journal
Journal of Non-Crystalline Solids
0022-3093
Publisher
Elsevier
Publication Date
Identifiers
DOI: 10.1016/0022-3093(87)90007-x

Abstract

Abstract In the first part the σ o-problem, i.e. the magnitude of the preexponential factor of the electrical conductivity σ is treated in some detail. The temperature shift of the Fermi level, measured for a weekly P-doped a-Si:H sample when σ decreases by the Staebler-Wronski effect over several orders of magnitude, gives an answer to the question to what extent the Meyer-Neldel rule is applicable for a-Si:H. In the second part the role of weak bonds and hydrogen motion for the metastability phenomena, the magnitude of the electrical gap and the effective correlation energy of the dangling bonds are discussed.

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