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Rutherford backscattering research on the strained SiGe/Si structure

Authors
Journal
Solid State Communications
0038-1098
Publisher
Elsevier
Publication Date
Volume
92
Issue
12
Identifiers
DOI: 10.1016/0038-1098(94)90021-3

Abstract

Abstract The ion beam channeling technique has been used to characterize the SiGe/Si structure. It reveals different relative yield between <100> and <110> aligned spectra for strained SiGe layer, silicon buffer layer and silicon substrate which depends on different atomic arrangement.

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