Abstract The paper deals with conductivity, thermoelectric power and field effect measurements on amorphous Ge specimens prepared by the decomposition of germane gas in a rf glow discharge. Substrate temperatures T d of 300, 400 and 500 K were used during deposition. The sign of the thermoelectric power S is negative throughout the temperature range investigated (200–500 K). Above 300 K, the conductivity activation energy in specimens prepared at T d = 500 K lies between 0.40 and 0.43 eV; it is equal to the gradient of the S versus 1/ T curves, suggesting transport in the extended electron states. Below room temperature there is an increasing contribution in all specimens from electron hopping transport in localized states lying about 0.25 eV below ϵ C. Both conductivity and thermoelectric power results can be interpreted satisfactorily in terms of these two current paths. Hopping at the Fermi level has not been observed. The preliminary field effect measurements indicate that, as in amorphous Si, ϵ f lies near a density of state minimum. The density of states at ϵ f is appreciably higher than that in similarly prepared Si specimens.