Affordable Access

Pseudo-random pulsed IV characterisation system for GAAS MESFET/HEMT devices

Microwave engineering Europe
Publication Date
  • Ing-Inf/01 Elettronica


A novel experimental system for observing the dependence of the trapping states on electric field for GaAs MESFET/HEMT devices is presented. The new procedure employs a pseudo-random pulse characterisation system for observing the memory effect in these devices. The results indicate that the trapping effect is more serious than may be thought.

There are no comments yet on this publication. Be the first to share your thoughts.