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Lateral transport in boron doped SiGe quantum wells

Authors
Journal
Superlattices and Microstructures
0749-6036
Publisher
Elsevier
Publication Date
Volume
25
Identifiers
DOI: 10.1006/spmi.1998.0638
Disciplines
  • Physics

Abstract

Abstract The temperature dependence of lateral conductivity and hole mobility in boron doped Si/SiGe/Si quantum well structures were studied. The conductivity at the temperatures below 20 K is shown to be due to hopping over B centers while at higher temperatures it is due to two-stage excitation consisting of thermal activation of holes from the ground to strain-split B states and the next hole tunneling into the valence band.

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