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Index of refraction of the glassy AsxTe100− xsystem

Authors
Journal
Solar Energy Materials
0165-1633
Publisher
Elsevier
Publication Date
Volume
8
Identifiers
DOI: 10.1016/0165-1633(82)90048-x

Abstract

Abstract The index of refraction of the amorphous semiconducting system As x Te 100− x was measured in the concentration range x = 16 to 55 and in the temperature region from 82 to 300 K. Supplementary measurements include the density, temperature dilation and the exponential absorption edge. The data vary smoothly with x and T and can be described by a simple mixing of atomic polarizabilities assuming local field correction of the Clausius-Mossotti type.

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