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Three-level operation of a diode-bar-pumped Yb:S-FAP laser

Authors
Journal
Optics Communications
0030-4018
Publisher
Elsevier
Publication Date
Volume
264
Issue
1
Identifiers
DOI: 10.1016/j.optcom.2006.02.018
Keywords
  • Yb:S-Fap
  • Three-Level Lasers
  • Diode-Pumping

Abstract

Abstract We present an all solid-state Yb:S-FAP laser system running on the three-level laser transition at 985 nm. The pump source was a high fill-factor laser diode bar, with the output reformatted using a two-mirror beamshaping system to produce a rectangular pump beam that focused to a square spot. A nearly on-axis multipassing system was used to obtain four pump passes through a 1.6 mm Yb:S-FAP laser crystal. Gain-switched three-level laser output was achieved with an efficiency of 4.3% with respect to incident pump power. Electro-optic Q-switching produced 0.12 mJ pulses for a pump pulse energy of 11 mJ. Intra-cavity second-harmonic generation yielded a maximum pulse energy at 492.5 nm of 12 μJ.

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